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Journal of Emerging Trends in Computing and Information Sciences >> Call for Papers Vol. 8 No. 3, March 2017

Journal of Emerging Trends in Computing and Information Sciences

Investigation of Cross Gain Modulation in Quantum-Dot Amplifier Using Four-Level Rate Equations Model

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Author R. S. Fyath, Abdul Kareem H. Dagher, Hussein H. Warid
ISSN 2079-8407
On Pages 896-906
Volume No. 3
Issue No. 6
Issue Date June 01, 2012
Publishing Date June 01, 2012
Keywords QD-amplifier, Wavelength conversion, Cross gain modulation


Abstract

An analytical model for the small-signal cross gain modulation (XGM) in undoped quantum dot (QD) - semiconductor optical amplifiers (SOAs) is derived using four-level rate equations model (4LREM),. The model takes into account the effect of wetting layer (WL), the continuum states (CS), excited states (ES), and the nonlinear optical gain of the dots. The calculated small-signal conversion efficiency is compared with those predicated from the three-level rate equations model (3LREM). The results show that the CS acts as a carrier reservoir for the lower energy states. Also, the reduced intersubband from the upper excited to ground state carrier relaxation time will increase the XGM conversion efficiency. The present analysis also provides insight on the escape/relaxation lifetimes of the QD amplifier which is very important for characterizing and understanding the performance characteristics of other similar-structure devices.  

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